- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Applied Filters :
6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
3,252
In-stock
|
IXYS | MOSFET N-CH 550V 22A TO-247AD | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 550V | 22A (Tc) | 270 mOhm @ 11A, 10V | 4.5V @ 4mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,590
In-stock
|
Infineon Technologies | MOSFET N-CH 560V 32A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 284W (Tc) | N-Channel | - | 560V | 32A (Tc) | 110 mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,252
In-stock
|
IXYS | MOSFET N-CH 550V 22A TO-247AD | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 550V | 22A (Tc) | 270 mOhm @ 11A, 10V | 4.5V @ 4mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,590
In-stock
|
Infineon Technologies | MOSFET N-CH 560V 32A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 284W (Tc) | N-Channel | - | 560V | 32A (Tc) | 110 mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,252
In-stock
|
IXYS | MOSFET N-CH 550V 22A TO-247AD | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 550V | 22A (Tc) | 270 mOhm @ 11A, 10V | 4.5V @ 4mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,590
In-stock
|
Infineon Technologies | MOSFET N-CH 560V 32A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 284W (Tc) | N-Channel | - | 560V | 32A (Tc) | 110 mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170nC @ 10V | 4200pF @ 25V | 10V | ±20V | |||
