Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH240N055T
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767
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IXYS MOSFET N-CH 55V 240A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 55V 240A (Tc) 3.6 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7600pF @ 25V 10V ±20V
IXTH240N055T
RFQ
RFQ
767
In-stock
IXYS MOSFET N-CH 55V 240A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 55V 240A (Tc) 3.6 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7600pF @ 25V 10V ±20V
Default Photo
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$4.61
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2,621
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Infineon Technologies MOSFET N-CH 55V 98A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 55V 110A (Tc) 8 mOhm @ 59A, 10V 4V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V
Default Photo
Per Unit
$2.86
RFQ
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1,106
In-stock
Infineon Technologies MOSFET N-CH 55V 110A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 55V 110A (Tc) 8 mOhm @ 59A, 10V 4V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V
IXTH240N055T
RFQ
RFQ
767
In-stock
IXYS MOSFET N-CH 55V 240A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 55V 240A (Tc) 3.6 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7600pF @ 25V 10V ±20V
AUIRFP064N
Per Unit
$4.61
RFQ
RFQ
2,621
In-stock
Infineon Technologies MOSFET N-CH 55V 98A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 55V 110A (Tc) 8 mOhm @ 59A, 10V 4V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V
IRFP064NPBF
Per Unit
$2.86
RFQ
RFQ
1,106
In-stock
Infineon Technologies MOSFET N-CH 55V 110A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 55V 110A (Tc) 8 mOhm @ 59A, 10V 4V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V