- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.4 mOhm @ 30A, 10V (6)
- 1.8 mOhm @ 30A, 10V (18)
- 14 mOhm @ 5.5A, 10V (3)
- 2.4 mOhm @ 25A, 10V (6)
- 2.8 mOhm @ 25A, 10V (9)
- 2.8 mOhm @ 40A, 10V (3)
- 22 mOhm @ 4.5A, 10V (3)
- 24 mOhm @ 35A, 10V (15)
- 26.3 mOhm @ 35A, 10V (3)
- 3.2 mOhm @ 20A, 10V (2)
- 4.1 mOhm @ 45A, 10V (2)
- 4.7 mOhm @ 20A, 10V (9)
- 42 mOhm @ 26A, 10V (6)
- 5.3 mOhm @ 17.5A, 10V (9)
- 5.5 mOhm @ 17.5A, 10V (9)
- 7 mOhm @ 15A, 10V (9)
- 8.5 mOhm @ 16.4A, 10V (12)
- 9 mOhm @ 16.4A, 10V (6)
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
130 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
1,391
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
1,172
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
1,289
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,732
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 62W (Tc) | N-Channel | - | 30V | 16A (Tc) | 8.5 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1865pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,654
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,245
In-stock
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Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
3,649
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,977
In-stock
|
Vishay Siliconix | MOSFET N-CHAN 30V POWERPAK 1212- | Automotive, AEC-Q101, TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W | 62W (Tc) | N-Channel | - | 30V | 16A (Tc) | 8.5 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1865pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,173
In-stock
|
Vishay Siliconix | MOSFET N-CHAN 30V POWERPAK 1212- | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W | 62W (Tc) | N-Channel | - | 30V | 16A (Tc) | 8.5 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1865pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,200
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 26.3 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,067
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 9A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | - | 30V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 2V @ 200µA | 39nC @ 10V | 1650pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
2,792
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 2.67W (Ta), 104W (Tc) | N-Channel | - | 45V | 139A (Ta), 80A (Tc) | 2.8 mOhm @ 40A, 10V | 2.4V @ 300µA | 39nC @ 10V | 3.2nF @ 22.5V | 4.5V, 10V | ±20V | |||
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RFQ |
889
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 11A (Ta) | 14 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,005
In-stock
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Vishay Siliconix | MOSFET N-CHAN 30V POWERPAK 1212- | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W | 62W (Tc) | N-Channel | - | 30V | 16A (Tc) | 8.5 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1865pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,424
In-stock
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ON Semiconductor | MOSFET N-CH 30V 17.5A POWER56 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.3W (Ta), 41W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 26A (Tc) | 5.5 mOhm @ 17.5A, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
765
In-stock
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ON Semiconductor | MOSFET N-CH 30V 17.5A POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.3W (Ta), 41W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 26A (Tc) | 5.5 mOhm @ 17.5A, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
635
In-stock
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ON Semiconductor | MOSFET N-CH 30V 17.5A POWER56 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.3W (Ta), 41W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 26A (Tc) | 5.5 mOhm @ 17.5A, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,118
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 35A TO252-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 120V | 35A (Tc) | 24 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,150
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 35A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 120V | 35A (Tc) | 24 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,588
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 35A TO252-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 120V | 35A (Tc) | 24 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,188
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 106W (Tc) | N-Channel | - | 30V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 1.95V @ 1mA | 39nC @ 10V | 2435pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,105
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 106W (Tc) | N-Channel | - | 30V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 1.95V @ 1mA | 39nC @ 10V | 2435pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,949
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 106W (Tc) | N-Channel | - | 30V | 100A (Tc) | 2.8 mOhm @ 25A, 10V | 1.95V @ 1mA | 39nC @ 10V | 2435pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,485
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 25A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,122
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 25A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,906
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 25A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,407
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 17.5A 8MLP | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 31W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 19.5A (Tc) | 5.3 mOhm @ 17.5A, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,932
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 17.5A 8MLP | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 31W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 19.5A (Tc) | 5.3 mOhm @ 17.5A, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,119
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 17.5A 8MLP | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 31W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 19.5A (Tc) | 5.3 mOhm @ 17.5A, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
604
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 23A TSDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 69W (Tc) | N-Channel | - | 25V | 23A (Ta), 40A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V |