- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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33 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,654
In-stock
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Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,245
In-stock
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Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
3,649
In-stock
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Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
3,492
In-stock
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Renesas Electronics America | MOSFET N-CH 40V LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 40V | 50A (Ta) | 3.2 mOhm @ 25A, 10V | - | 39nC @ 10V | 3000pF @ 10V | 10V | ±20V | |||
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RFQ |
1,799
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
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RFQ |
3,612
In-stock
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Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
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RFQ |
1,159
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
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RFQ |
3,654
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,245
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,649
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
3,492
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 40V | 50A (Ta) | 3.2 mOhm @ 25A, 10V | - | 39nC @ 10V | 3000pF @ 10V | 10V | ±20V | |||
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RFQ |
1,799
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
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RFQ |
3,612
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
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RFQ |
1,159
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
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RFQ |
3,645
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
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RFQ |
1,703
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
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RFQ |
2,592
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
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RFQ |
3,870
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 16A 1212-8 | Automotive, AEC-Q101, TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | - | 62W (Tc) | N-Channel | - | 40V | 16A (Tc) | 9 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1855pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,045
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 16A 1212-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | - | 62W (Tc) | N-Channel | - | 40V | 16A (Tc) | 9 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1855pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,399
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 16A 1212-8 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 62W (Tc) | N-Channel | - | 40V | 16A (Tc) | 9 mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1855pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,654
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,245
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,649
In-stock
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-PDFN (5x6) | 3.1W (Ta), 83W (Tc) | N-Channel | - | 40V | 15A (Ta), 75A (Tc) | 7 mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | 2151pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,492
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 40V | 50A (Ta) | 3.2 mOhm @ 25A, 10V | - | 39nC @ 10V | 3000pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
1,799
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,612
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,159
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 100A LFPAK | TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 147W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | 2781pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,645
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
1,703
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
|
|
RFQ |
2,592
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
