Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M012A060H
RFQ
RFQ
2,065
In-stock
Global Power Technologies Group MOSFET N-CH 600V 12A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 39nC @ 10V 2308pF @ 25V 10V ±30V
GP1M015A050H
RFQ
RFQ
854
In-stock
Global Power Technologies Group MOSFET N-CH 500V 14A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V
GP1M012A060H
RFQ
RFQ
2,065
In-stock
Global Power Technologies Group MOSFET N-CH 600V 12A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 39nC @ 10V 2308pF @ 25V 10V ±30V
GP1M015A050H
RFQ
RFQ
854
In-stock
Global Power Technologies Group MOSFET N-CH 500V 14A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V
TSM15N50CZ C0G
Per Unit
$2.24
RFQ
RFQ
2,661
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 500V 14A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 - N-Channel 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V
TSM15N50CZ C0G
Per Unit
$2.24
RFQ
RFQ
2,661
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 500V 14A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 - N-Channel 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V
GP1M012A060H
RFQ
RFQ
2,065
In-stock
Global Power Technologies Group MOSFET N-CH 600V 12A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 39nC @ 10V 2308pF @ 25V 10V ±30V
GP1M015A050H
RFQ
RFQ
854
In-stock
Global Power Technologies Group MOSFET N-CH 500V 14A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V
TSM15N50CZ C0G
Per Unit
$2.24
RFQ
RFQ
2,661
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 500V 14A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 - N-Channel 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V