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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFBC40LCL		RFQ	PDF RFQ	2,129 In-stock	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	125W (Tc)	N-Channel	600V	6.2A (Tc)	1.2 Ohm @ 3.7A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF740LCL		RFQ	PDF RFQ	1,333 In-stock	Vishay Siliconix	MOSFET N-CH 400V 10A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	-	N-Channel	400V	10A (Tc)	550 mOhm @ 6A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF840LCL		RFQ	PDF RFQ	2,260 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRFBC40LCL		RFQ	PDF RFQ	2,129 In-stock	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	125W (Tc)	N-Channel	600V	6.2A (Tc)	1.2 Ohm @ 3.7A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF740LCL		RFQ	PDF RFQ	1,333 In-stock	Vishay Siliconix	MOSFET N-CH 400V 10A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	-	N-Channel	400V	10A (Tc)	550 mOhm @ 6A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF840LCL		RFQ	PDF RFQ	2,260 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF840LCLPBF	Per Unit $3.41	RFQ	PDF RFQ	982 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRFBC40LCL		RFQ	PDF RFQ	2,129 In-stock	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	125W (Tc)	N-Channel	600V	6.2A (Tc)	1.2 Ohm @ 3.7A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF740LCL		RFQ	PDF RFQ	1,333 In-stock	Vishay Siliconix	MOSFET N-CH 400V 10A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	-	N-Channel	400V	10A (Tc)	550 mOhm @ 6A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF840LCL		RFQ	PDF RFQ	2,260 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V
	IRF840LCLPBF	Per Unit $3.41	RFQ	PDF RFQ	982 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	3.1W (Ta), 125W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	10V	±30V

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