- Manufacture :
- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
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14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,978
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
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RFQ |
2,795
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
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|
RFQ |
1,809
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,595
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 290W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,978
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,795
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,809
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,595
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 290W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,638
In-stock
|
STMicroelectronics | MOSFET N CH 40V 160A I2PAK | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 40V | 160A (Tc) | 2.2 mOhm @ 80A, 10V | 4V @ 250µA | 240nC @ 10V | 13800pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,978
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,795
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,809
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 235A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,595
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 290W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,638
In-stock
|
STMicroelectronics | MOSFET N CH 40V 160A I2PAK | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 40V | 160A (Tc) | 2.2 mOhm @ 80A, 10V | 4V @ 250µA | 240nC @ 10V | 13800pF @ 25V | 10V | ±20V | |||
