- Manufacture :
- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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33 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
3,582
In-stock
|
IXYS | MOSFET N-CH 55V 160A ISOPLUS I4 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 200W (Tc) | N-Channel | - | 55V | 160A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | 10V | ±20V | |||
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|
RFQ |
3,230
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,369
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,521
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
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RFQ |
1,163
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,511
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,661
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,051
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,646
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,582
In-stock
|
IXYS | MOSFET N-CH 55V 160A ISOPLUS I4 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 200W (Tc) | N-Channel | - | 55V | 160A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,230
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,369
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,521
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,163
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,511
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,661
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,051
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,646
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,296
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,684
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,005
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 4 mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | 6590pF @ 25V | 4.3V, 10V | ±20V | |||
|
|
RFQ |
3,582
In-stock
|
IXYS | MOSFET N-CH 55V 160A ISOPLUS I4 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 200W (Tc) | N-Channel | - | 55V | 160A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,230
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,369
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,521
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,163
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,511
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,661
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,051
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,646
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
