Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GA100JT17-227
Per Unit
$312.14
RFQ
RFQ
1,742
In-stock
GeneSiC Semiconductor TRANS SJT 1700V 160A SOT227 - Not For New Designs Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1700V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
GA100JT12-227
Per Unit
$203.06
RFQ
RFQ
3,376
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 160A SOT227 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1200V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
IXFN220N20X3
Per Unit
$28.93
RFQ
RFQ
2,321
In-stock
IXYS 200V/160A ULTRA JUNCTION X3-CLAS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 390W (Tc) N-Channel 200V 160A (Tc) 6.2 mOhm @ 110A, 10V 4.5V @ 4mA 204nC @ 10V 13600pF @ 25V 10V ±20V
GA100JT17-227
Per Unit
$312.14
RFQ
RFQ
1,742
In-stock
GeneSiC Semiconductor TRANS SJT 1700V 160A SOT227 - Not For New Designs Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1700V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
GA100JT12-227
Per Unit
$203.06
RFQ
RFQ
3,376
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 160A SOT227 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1200V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
IXFN220N20X3
Per Unit
$28.93
RFQ
RFQ
2,321
In-stock
IXYS 200V/160A ULTRA JUNCTION X3-CLAS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 390W (Tc) N-Channel 200V 160A (Tc) 6.2 mOhm @ 110A, 10V 4.5V @ 4mA 204nC @ 10V 13600pF @ 25V 10V ±20V
GA100JT17-227
Per Unit
$312.14
RFQ
RFQ
1,742
In-stock
GeneSiC Semiconductor TRANS SJT 1700V 160A SOT227 - Not For New Designs Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1700V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
GA100JT12-227
Per Unit
$203.06
RFQ
RFQ
3,376
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 160A SOT227 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1200V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
IXFN220N20X3
Per Unit
$28.93
RFQ
RFQ
2,321
In-stock
IXYS 200V/160A ULTRA JUNCTION X3-CLAS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 390W (Tc) N-Channel 200V 160A (Tc) 6.2 mOhm @ 110A, 10V 4.5V @ 4mA 204nC @ 10V 13600pF @ 25V 10V ±20V