Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXFR26N100P
Per Unit
$26.50
RFQ
RFQ
3,788
In-stock
IXYS MOSFET N-CH 1000V 15A ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 290W (Tc) N-Channel - 1000V 15A (Tc) 430 mOhm @ 13A, 10V 6.5V @ 1mA 197nC @ 10V 11900pF @ 25V 10V ±30V
IXFR26N100P
Per Unit
$26.50
RFQ
RFQ
3,788
In-stock
IXYS MOSFET N-CH 1000V 15A ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 290W (Tc) N-Channel - 1000V 15A (Tc) 430 mOhm @ 13A, 10V 6.5V @ 1mA 197nC @ 10V 11900pF @ 25V 10V ±30V
IXFR26N100P
Per Unit
$26.50
RFQ
RFQ
3,788
In-stock
IXYS MOSFET N-CH 1000V 15A ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 290W (Tc) N-Channel - 1000V 15A (Tc) 430 mOhm @ 13A, 10V 6.5V @ 1mA 197nC @ 10V 11900pF @ 25V 10V ±30V