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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	SIHG17N80E-GE3	Per Unit $6.27	RFQ	PDF RFQ	3,967 In-stock	Vishay Siliconix	MOSFET N-CH 800V 15A TO247AC		E	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	208W (Tc)	N-Channel	-	800V	15A (Tc)	290 mOhm @ 8.5A, 10V	4V @ 250µA	122nC @ 10V	2408pF @ 100V	10V	±30V
	SIHG15N60E-GE3	Per Unit $3.84	RFQ	PDF RFQ	1,463 In-stock	Vishay Siliconix	MOSFET N-CH 600V 15A TO247AC		E	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	180W (Tc)	N-Channel	-	600V	15A (Tc)	280 mOhm @ 8A, 10V	4V @ 250µA	78nC @ 10V	1350pF @ 100V	10V	±30V
	SIHG17N80E-GE3	Per Unit $6.27	RFQ	PDF RFQ	3,967 In-stock	Vishay Siliconix	MOSFET N-CH 800V 15A TO247AC		E	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	208W (Tc)	N-Channel	-	800V	15A (Tc)	290 mOhm @ 8.5A, 10V	4V @ 250µA	122nC @ 10V	2408pF @ 100V	10V	±30V
	SIHG15N60E-GE3	Per Unit $3.84	RFQ	PDF RFQ	1,463 In-stock	Vishay Siliconix	MOSFET N-CH 600V 15A TO247AC		E	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	180W (Tc)	N-Channel	-	600V	15A (Tc)	280 mOhm @ 8A, 10V	4V @ 250µA	78nC @ 10V	1350pF @ 100V	10V	±30V

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