Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
APT7F80K
RFQ
RFQ
2,328
In-stock
Microsemi Corporation MOSFET N-CH 800V 7A TO-220 POWER MOS 8™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel 800V 7A (Tc) 1.5 Ohm @ 4A, 10V 5V @ 500µA 43nC @ 10V 1335pF @ 25V 10V ±30V
APT7F100B
Per Unit
$5.36
RFQ
RFQ
3,182
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Microsemi Corporation MOSFET N-CH 1000V 7A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 290W (Tc) N-Channel 1000V 7A (Tc) 2 Ohm @ 4A, 10V 5V @ 500µA 58nC @ 10V 1800pF @ 25V 10V ±30V
APT7F80K
RFQ
RFQ
2,328
In-stock
Microsemi Corporation MOSFET N-CH 800V 7A TO-220 POWER MOS 8™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel 800V 7A (Tc) 1.5 Ohm @ 4A, 10V 5V @ 500µA 43nC @ 10V 1335pF @ 25V 10V ±30V
APT7F100B
Per Unit
$5.36
RFQ
RFQ
3,182
In-stock
Microsemi Corporation MOSFET N-CH 1000V 7A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 290W (Tc) N-Channel 1000V 7A (Tc) 2 Ohm @ 4A, 10V 5V @ 500µA 58nC @ 10V 1800pF @ 25V 10V ±30V
APT7F80K
RFQ
RFQ
2,328
In-stock
Microsemi Corporation MOSFET N-CH 800V 7A TO-220 POWER MOS 8™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel 800V 7A (Tc) 1.5 Ohm @ 4A, 10V 5V @ 500µA 43nC @ 10V 1335pF @ 25V 10V ±30V
APT7F100B
Per Unit
$5.36
RFQ
RFQ
3,182
In-stock
Microsemi Corporation MOSFET N-CH 1000V 7A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 290W (Tc) N-Channel 1000V 7A (Tc) 2 Ohm @ 4A, 10V 5V @ 500µA 58nC @ 10V 1800pF @ 25V 10V ±30V