Supplier Device Package :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCPF380N60E
Per Unit
$2.02
RFQ
RFQ
1,121
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 31W (Tc) N-Channel 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V 10V ±20V
FCPF380N60E
Per Unit
$2.02
RFQ
RFQ
1,121
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 31W (Tc) N-Channel 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V 10V ±20V
Default Photo
Per Unit
$3.57
RFQ
RFQ
3,970
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 31W (Tc) N-Channel 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V - -
FCPF380N60E
Per Unit
$2.02
RFQ
RFQ
1,121
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 31W (Tc) N-Channel 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V 10V ±20V
FCPF380N60E-F152
Per Unit
$3.57
RFQ
RFQ
3,970
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 31W (Tc) N-Channel 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V - -