- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,818
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 9A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 135W (Tc) | N-Channel | - | 500V | 9A (Tc) | 800 mOhm @ 4.5A, 10V | 4V @ 250µA | 35nC @ 10V | 1030pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
2,766
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 135W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.8 mOhm @ 51A, 10V | 4V @ 80µA | 170nC @ 10V | 7768pF @ 25V | 10V | ±20V | |||
|
|
|
RFQ |
3,818
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 9A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 135W (Tc) | N-Channel | - | 500V | 9A (Tc) | 800 mOhm @ 4.5A, 10V | 4V @ 250µA | 35nC @ 10V | 1030pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
2,766
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 135W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.8 mOhm @ 51A, 10V | 4V @ 80µA | 170nC @ 10V | 7768pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,818
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 9A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 135W (Tc) | N-Channel | - | 500V | 9A (Tc) | 800 mOhm @ 4.5A, 10V | 4V @ 250µA | 35nC @ 10V | 1030pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
2,766
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 135W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.8 mOhm @ 51A, 10V | 4V @ 80µA | 170nC @ 10V | 7768pF @ 25V | 10V | ±20V | |||
