- Operating Temperature :
- Mounting Type :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
-
- 100A (Tc) (6)
- 10A (Tc) (3)
- 11.5A (Tc) (3)
- 11A (Tc) (13)
- 12.5A (Tc) (2)
- 12A (Tc) (5)
- 14A (Tc) (3)
- 15A (Ta) (3)
- 15A (Tc) (3)
- 16A (Tc) (2)
- 20A (Tc) (8)
- 21A (Tc) (6)
- 24A (Tc) (5)
- 25A (Tc) (5)
- 35A (Tc) (9)
- 42A (Tc) (4)
- 68A (Tc) (5)
- 74A (Tc) (3)
- 75A (Tc) (39)
- 8.9A (Tc) (3)
- 80A (Tc) (3)
- 89A (Tc) (2)
- 9.2A (Tc) (16)
- 90A (Tc) (2)
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 46A, 10V (2)
- 100 mOhm @ 10A (3)
- 12 mOhm @ 74A, 10V (3)
- 120 mOhm @ 10A (2)
- 13 mOhm @ 19A, 10V (9)
- 13.9 mOhm @ 15A, 10V (5)
- 140 mOhm @ 10A (3)
- 150 mOhm @ 12A, 10V (5)
- 160 mOhm @ 10.5A, 10V (6)
- 163 mOhm @ 10A, 10V (4)
- 180 mOhm @ 10A, 10V (4)
- 2.7 mOhm @ 15A, 10V (3)
- 20 mOhm @ 42A, 10V (4)
- 270 mOhm @ 8A, 10V (2)
- 300 mOhm @ 7.5A, 10V (6)
- 340 mOhm @ 7A, 10V (3)
- 430 mOhm @ 6.25A, 10V (2)
- 500 mOhm @ 6A, 10V (5)
- 520 mOhm @ 5.75A, 10V (3)
- 520 mOhm @ 6.6A, 10V (13)
- 6.5 mOhm @ 66A, 10V (22)
- 7.5 mOhm @ 40A, 10V (3)
- 750 mOhm @ 5.5A, 10V (16)
- 8.7 mOhm @ 10A, 10V (2)
- 820 mOhm @ 5.3A, 10V (3)
- 9 mOhm @ 60A, 10V (3)
- 9.4 mOhm @ 53A, 10V (17)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 110nC @ 10V (42)
- 130nC @ 10V (9)
- 17nC @ 10V (3)
- 180nC @ 10V (4)
- 26nC @ 10V (3)
- 30nC @ 10V (3)
- 33nC @ 10V (4)
- 34nC @ 10V (4)
- 35nC @ 10V (4)
- 36nC @ 10V (3)
- 37nC @ 10V (5)
- 40nC @ 10V (5)
- 46.8nC @ 10V (3)
- 49nC @ 10V (16)
- 52nC @ 10V (15)
- 59nC @ 10V (5)
- 60nC @ 10V (6)
- 66nC @ 10V (3)
- 86nC @ 10V (3)
- 93nC @ 10V (3)
- 98nC @ 5V (2)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1235pF @ 25V (3)
- 1320pF @ 100V (4)
- 1370pF @ 100V (5)
- 1400pF @ 25V (16)
- 1403pF @ 800V (5)
- 1423pF @ 25V (13)
- 1440pF @ 100V (4)
- 1500pF @ 100V (4)
- 1750pF @ 25V (3)
- 1800pF @ 25V (3)
- 2200pF @ 25V (2)
- 2300pF @ 25V (4)
- 2660pF @ 25V (9)
- 2900pF @ 25V (3)
- 3195pF @ 50V (5)
- 3270pF @ 25V (17)
- 3346pF @ 40V (2)
- 3435pF @ 40V (3)
- 3450pF @ 25V (22)
- 3500pF @ 25V (4)
- 3600pF @ 25V (2)
- 3954pF @ 12V (3)
- 5605pF @ 25V (3)
- 866pF @ 100V (3)
- 900pF @ 100V (5)
- 950pF @ 10V (3)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
153 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
2,727
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 170W (Tc) | - | - | 1200V | 10A (Tc) | 140 mOhm @ 10A | - | - | - | - | - | |||
|
|
|
RFQ |
1,589
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 35A TO220-5 | TEMPFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 | P-TO220-5 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55V | 35A (Tc) | 13 mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | 2660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,486
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 35A TO220-5 | TEMPFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 Formed Leads | PG-TO220-5-3 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55V | 35A (Tc) | 13 mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | 2660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,135
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 11A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 500V | 11A (Tc) | 520 mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
2,561
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,321
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,160
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,410
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,814
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,120
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,174
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
3,163
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 12A TO247 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 170W (Tc) | N-Channel | - | 950V | 12A (Tc) | 500 mOhm @ 6A, 10V | 5V @ 100µA | 40nC @ 10V | 900pF @ 100V | 10V | ±30V | |||
|
|
RFQ |
864
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 25A TO263-7 | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK (7-Lead) | 170W (Tc) | - | - | 1200V | 25A (Tc) | 100 mOhm @ 10A | - | - | 1403pF @ 800V | - | - | |||
|
|
|
RFQ |
3,043
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 35A TO220-5 | TEMPFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-220-5 | PG-TO220-5 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55V | 35A (Tc) | 13 mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | 2660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,710
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 11.5A TO-220 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 170W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 520 mOhm @ 5.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1235pF @ 25V | 10V | ±25V | |||
|
|
RFQ |
2,043
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
|
|
|
RFQ |
2,628
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 74A TO-220 | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 170W (Tc) | N-Channel | - | 100V | 74A (Tc) | 12 mOhm @ 74A, 10V | 4.5V @ 250µA | 86nC @ 10V | 5605pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,733
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,459
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 24A TO-220 | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 170W (Tc) | N-Channel | - | 600V | 24A (Tc) | 150 mOhm @ 12A, 10V | 4V @ 250µA | 37nC @ 10V | 1370pF @ 100V | 10V | ±25V | |||
|
|
RFQ |
1,992
In-stock
|
STMicroelectronics | MOSFET N-CHANNEL 800V 14A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 170W (Tc) | N-Channel | - | 800V | 14A (Tc) | 340 mOhm @ 7A, 10V | 5V @ 250µA | 26nC @ 10V | 866pF @ 100V | 10V | ±30V | |||
|
|
RFQ |
1,937
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
3,422
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
|
|
|
RFQ |
2,727
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 170W (Tc) | - | - | 1200V | 10A (Tc) | 140 mOhm @ 10A | - | - | - | - | - | |||
|
|
RFQ |
2,327
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,698
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
706
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,947
In-stock
|
STMicroelectronics | MOSFET N-CH 80V 80A TO-220 | STripFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 170W (Tc) | N-Channel | - | 80V | 80A (Tc) | 7.5 mOhm @ 40A, 10V | 4.5V @ 250µA | 46.8nC @ 10V | 3435pF @ 40V | 10V | ±20V | |||
|
|
RFQ |
1,826
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 170W (Tc) | N-Channel | - | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
2,918
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 11A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 500V | 11A (Tc) | 520 mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 10V | ±30V | |||
|
|
RFQ |
3,568
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 100V I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | - | 100V | 68A (Tc) | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | 10V | ±20V | |||
