- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
11 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
1,787
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 6.1A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 60W (Tc) | N-Channel | - | 600V | 6.1A (Tc) | 600 mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | 550pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,341
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 60W (Tc) | N-Channel | - | 100V | 9.2A (Tc) | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
|
RFQ |
3,505
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 60W (Tc) | N-Channel | - | 100V | 9.2A (Tc) | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
|
RFQ |
1,787
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 6.1A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 60W (Tc) | N-Channel | - | 600V | 6.1A (Tc) | 600 mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | 550pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,341
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 60W (Tc) | N-Channel | - | 100V | 9.2A (Tc) | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
|
RFQ |
3,505
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 60W (Tc) | N-Channel | - | 100V | 9.2A (Tc) | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
|
RFQ |
803
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 45A I2PAK | DeepGATE™, STripFET™ VII | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 60W (Tc) | N-Channel | - | 100V | 45A (Tc) | 18 mOhm @ 22.5A, 10V | 4.5V @ 250µA | 25nC @ 10V | 1640pF @ 50V | 10V | 20V | |||
|
|
RFQ |
1,787
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 6.1A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 60W (Tc) | N-Channel | - | 600V | 6.1A (Tc) | 600 mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | 550pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,341
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 60W (Tc) | N-Channel | - | 100V | 9.2A (Tc) | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
|
RFQ |
3,505
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 60W (Tc) | N-Channel | - | 100V | 9.2A (Tc) | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
|
|
RFQ |
803
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 45A I2PAK | DeepGATE™, STripFET™ VII | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 60W (Tc) | N-Channel | - | 100V | 45A (Tc) | 18 mOhm @ 22.5A, 10V | 4.5V @ 250µA | 25nC @ 10V | 1640pF @ 50V | 10V | 20V | |||
