- Part Status :
- Operating Temperature :
- Package / Case :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.05 Ohm @ 2.9A, 10V (3)
- 1.2 Ohm @ 2.25A, 10V (2)
- 1.22 Ohm @ 2.6A, 10V (3)
- 10.5 mOhm @ 20A, 10V (3)
- 10.5 mOhm @ 25A, 10V (3)
- 3.5 Ohm @ 1A, 10V (3)
- 5.9 mOhm @ 37.5A, 10V (5)
- 600 mOhm @ 3.5A, 10V (3)
- 7.5 mOhm @ 24A, 10V (3)
- 8 mOhm @ 30A, 10V (3)
- 8.4 mOhm @ 24A, 10V (2)
- 820 mOhm @ 2.5A, 10V (2)
- 820 mOhm @ 3.1A, 10V (3)
- 900 mOhm @ 2.7A, 10V (3)
- 950 mOhm @ 2.5A, 10V (3)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
44 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,168
In-stock
|
STMicroelectronics | MOSFET N-CH 24V 50A I-PAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 24V | 50A (Tc) | 10.5 mOhm @ 25A, 10V | 1.8V @ 250µA | 24nC @ 10V | 1400pF @ 25V | 5V, 10V | ±20V | |||
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|
RFQ |
2,533
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 40A IPAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 40A (Tc) | 10.5 mOhm @ 20A, 10V | 1V @ 250µA | 14nC @ 5V | 1434pF @ 25V | 5V, 10V | ±20V | |||
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RFQ |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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RFQ |
1,343
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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RFQ |
1,078
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 2.5A IPAK | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 800V | 2.5A (Tc) | 3.5 Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 130pF @ 100V | 10V | 30V | |||
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RFQ |
2,813
In-stock
|
STMicroelectronics | MOSFET N-CH 600V IPAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 600V | 5A (Tc) | 950 mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | 271pF @ 100V | 10V | ±25V | |||
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|
RFQ |
2,909
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 75A IPAK | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 75A (Tc) | 5.9 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1690pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
859
In-stock
|
STMicroelectronics | MOSFET N-CH 25V 48A IPAK | STripFET™ V | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 25V | 48A (Tc) | 7.5 mOhm @ 24A, 10V | 1V @ 250µA | 8nC @ 5V | 1300pF @ 25V | 5V, 10V | ±22V | |||
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RFQ |
658
In-stock
|
STMicroelectronics | MOSFET N-CH 25V 60A IPAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 25V | 60A (Tc) | 8 mOhm @ 30A, 10V | 1.8V @ 250µA | 32nC @ 10V | 1400pF @ 16V | 5V, 10V | ±20V | |||
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|
RFQ |
1,168
In-stock
|
STMicroelectronics | MOSFET N-CH 24V 50A I-PAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 24V | 50A (Tc) | 10.5 mOhm @ 25A, 10V | 1.8V @ 250µA | 24nC @ 10V | 1400pF @ 25V | 5V, 10V | ±20V | |||
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RFQ |
3,763
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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RFQ |
2,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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RFQ |
3,332
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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|
RFQ |
2,533
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 40A IPAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 40A (Tc) | 10.5 mOhm @ 20A, 10V | 1V @ 250µA | 14nC @ 5V | 1434pF @ 25V | 5V, 10V | ±20V | |||
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|
RFQ |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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|
RFQ |
1,343
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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RFQ |
1,078
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 2.5A IPAK | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 800V | 2.5A (Tc) | 3.5 Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 130pF @ 100V | 10V | 30V | |||
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RFQ |
2,813
In-stock
|
STMicroelectronics | MOSFET N-CH 600V IPAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 600V | 5A (Tc) | 950 mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | 271pF @ 100V | 10V | ±25V | |||
|
|
RFQ |
2,909
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 75A IPAK | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 75A (Tc) | 5.9 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1690pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
859
In-stock
|
STMicroelectronics | MOSFET N-CH 25V 48A IPAK | STripFET™ V | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 25V | 48A (Tc) | 7.5 mOhm @ 24A, 10V | 1V @ 250µA | 8nC @ 5V | 1300pF @ 25V | 5V, 10V | ±22V | |||
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|
RFQ |
658
In-stock
|
STMicroelectronics | MOSFET N-CH 25V 60A IPAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 25V | 60A (Tc) | 8 mOhm @ 30A, 10V | 1.8V @ 250µA | 32nC @ 10V | 1400pF @ 16V | 5V, 10V | ±20V | |||
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|
RFQ |
3,763
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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|
RFQ |
2,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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|
RFQ |
3,332
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
RFQ |
1,092
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 48A IPAK | STripFET™ V | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 48A (Tc) | 8.4 mOhm @ 24A, 10V | 3V @ 250µA | 8.8nC @ 5V | 1620pF @ 25V | 5V, 10V | ±20V | |||
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|
RFQ |
2,116
In-stock
|
STMicroelectronics | MOSFET N-CH 600V IPAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 13.5nC @ 10V | 232pF @ 100V | 10V | ±25V | |||
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|
RFQ |
2,317
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 5.5A IPAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.5A (Tc) | 820 mOhm @ 2.5A, 10V | 4V @ 250µA | 11.5nC @ 10V | 325pF @ 100V | 10V | ±25V | |||
|
|
RFQ |
2,128
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 75A IPAK | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 75A (Tc) | 5.9 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 23.8nC @ 4.5V | 2030pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,168
In-stock
|
STMicroelectronics | MOSFET N-CH 24V 50A I-PAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 24V | 50A (Tc) | 10.5 mOhm @ 25A, 10V | 1.8V @ 250µA | 24nC @ 10V | 1400pF @ 25V | 5V, 10V | ±20V | |||
|
|
RFQ |
2,533
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 40A IPAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 30V | 40A (Tc) | 10.5 mOhm @ 20A, 10V | 1V @ 250µA | 14nC @ 5V | 1434pF @ 25V | 5V, 10V | ±20V | |||
