- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,395
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | |||
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|
RFQ |
850
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | |||
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|
|
RFQ |
3,395
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | |||
|
|
RFQ |
850
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,395
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | |||
|
|
RFQ |
850
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | |||
