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- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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18 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,426
In-stock
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Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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RFQ |
3,386
In-stock
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Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,426
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,386
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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|
RFQ |
2,588
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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RFQ |
2,362
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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RFQ |
1,868
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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RFQ |
823
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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RFQ |
3,733
In-stock
|
STMicroelectronics | MOSFET N-CH 150V 5A 8SO | DeepGATE™, STripFET™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 150V | 5A (Tc) | 63 mOhm @ 2.5A, 10V | 4V @ 250µA | 48nC @ 10V | 2710pF @ 25V | 10V | ±20V | |||
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RFQ |
3,277
In-stock
|
STMicroelectronics | MOSFET N-CH 150V 5A 8SO | DeepGATE™, STripFET™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 150V | 5A (Tc) | 63 mOhm @ 2.5A, 10V | 4V @ 250µA | 48nC @ 10V | 2710pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,426
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,386
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,588
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
RFQ |
2,362
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
RFQ |
1,868
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
RFQ |
823
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
RFQ |
3,733
In-stock
|
STMicroelectronics | MOSFET N-CH 150V 5A 8SO | DeepGATE™, STripFET™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 150V | 5A (Tc) | 63 mOhm @ 2.5A, 10V | 4V @ 250µA | 48nC @ 10V | 2710pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,277
In-stock
|
STMicroelectronics | MOSFET N-CH 150V 5A 8SO | DeepGATE™, STripFET™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 150V | 5A (Tc) | 63 mOhm @ 2.5A, 10V | 4V @ 250µA | 48nC @ 10V | 2710pF @ 25V | 10V | ±20V | |||
