Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 500V 149A J3 - Discontinued at Digi-Key Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount J3 Module Module 1250W (Tc) N-Channel 500V 149A (Tc) 25 mOhm @ 74.5A, 10V 5V @ 10mA 364nC @ 10V 17500pF @ 25V 10V ±30V
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Microsemi Corporation MOSFET N-CH 200V 317A J3 - Discontinued at Digi-Key Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount J3 Module Module 1136W (Tc) N-Channel 200V 317A (Tc) 5 mOhm @ 158.5A, 10V 5V @ 10mA 448nC @ 10V 27400pF @ 25V 10V ±30V
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703
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Microsemi Corporation MOSFET N-CH 500V 149A J3 - Discontinued at Digi-Key Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount J3 Module Module 1250W (Tc) N-Channel 500V 149A (Tc) 25 mOhm @ 74.5A, 10V 5V @ 10mA 364nC @ 10V 17500pF @ 25V 10V ±30V
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Microsemi Corporation MOSFET N-CH 500V 163A J3 - Discontinued at Digi-Key Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount J3 Module Module 1136W (Tc) N-Channel 500V 163A (Tc) 19 mOhm @ 81.5A, 10V 5V @ 10mA 492nC @ 10V 22400pF @ 25V 10V ±30V
Default Photo
RFQ
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2,997
In-stock
Microsemi Corporation MOSFET N-CH 200V 317A J3 - Discontinued at Digi-Key Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount J3 Module Module 1136W (Tc) N-Channel 200V 317A (Tc) 5 mOhm @ 158.5A, 10V 5V @ 10mA 448nC @ 10V 27400pF @ 25V 10V ±30V