Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUZ80A
RFQ
RFQ
942
In-stock
Infineon Technologies MOSFET N-CH 800V 3.6A TO-220AB SIPMOS® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel 800V 3.6A (Tc) 3 Ohm @ 2A, 10V 4V @ 1mA - 1350pF @ 25V 10V ±20V
BUZ80A
RFQ
RFQ
942
In-stock
Infineon Technologies MOSFET N-CH 800V 3.6A TO-220AB SIPMOS® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel 800V 3.6A (Tc) 3 Ohm @ 2A, 10V 4V @ 1mA - 1350pF @ 25V 10V ±20V
BUZ80A
RFQ
RFQ
942
In-stock
Infineon Technologies MOSFET N-CH 800V 3.6A TO-220AB SIPMOS® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel 800V 3.6A (Tc) 3 Ohm @ 2A, 10V 4V @ 1mA - 1350pF @ 25V 10V ±20V