Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFS7440PBF
RFQ
RFQ
2,982
In-stock
Infineon Technologies MOSFET N CH 40V 120A D2PAK HEXFET®, StrongIRFET™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 208W (Tc) N-Channel - 40V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.9V @ 100µA 135nC @ 10V 4730pF @ 25V 6V, 10V ±20V
IRFS7440PBF
RFQ
RFQ
2,982
In-stock
Infineon Technologies MOSFET N CH 40V 120A D2PAK HEXFET®, StrongIRFET™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 208W (Tc) N-Channel - 40V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.9V @ 100µA 135nC @ 10V 4730pF @ 25V 6V, 10V ±20V
IRFS7440PBF
RFQ
RFQ
2,982
In-stock
Infineon Technologies MOSFET N CH 40V 120A D2PAK HEXFET®, StrongIRFET™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 208W (Tc) N-Channel - 40V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.9V @ 100µA 135nC @ 10V 4730pF @ 25V 6V, 10V ±20V