- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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16 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
2,089
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 100V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | 6160pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,851
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 100V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | 6160pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,089
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 100V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | 6160pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,851
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 100V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | 6160pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,479
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
2,443
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
2,175
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
|
|
RFQ |
3,125
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
|
|
RFQ |
845
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
|
|
RFQ |
2,089
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 100V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | 6160pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,851
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | - | 100V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | 6160pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,479
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
2,443
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
2,175
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
|
|
RFQ |
3,125
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
|
|
RFQ |
845
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
