Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRFZ44ZS
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Infineon Technologies MOSFET N-CH 55V 51A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 80W (Tc) N-Channel - 55V 51A (Tc) 13.9 mOhm @ 31A, 10V 4V @ 250µA 43nC @ 10V 1420pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 55V 51A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 82W (Tc) N-Channel - 55V 51A (Tc) 13.6 mOhm @ 31A, 10V 4V @ 250µA 46nC @ 10V 1460pF @ 25V 10V ±20V
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