- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
3,702
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | - | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,753
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
|
|
RFQ |
3,797
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
|
|
RFQ |
3,702
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | - | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,753
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
|
|
RFQ |
3,797
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
|
|
RFQ |
3,702
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | - | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,753
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
|
|
RFQ |
3,797
In-stock
|
Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | 108pF @ 25V | 0V, 10V | ±20V | |||
