Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
ZVP2120ASTZ
RFQ
RFQ
3,692
In-stock
Diodes Incorporated MOSFET P-CH 200V 0.12A TO92-3 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 700mW (Ta) P-Channel - 200V 120mA (Ta) 25 Ohm @ 150mA, 10V 3.5V @ 1mA - 100pF @ 25V 10V ±20V
ZVP2120ASTZ
RFQ
RFQ
3,692
In-stock
Diodes Incorporated MOSFET P-CH 200V 0.12A TO92-3 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 700mW (Ta) P-Channel - 200V 120mA (Ta) 25 Ohm @ 150mA, 10V 3.5V @ 1mA - 100pF @ 25V 10V ±20V
STQ2LN60K3-AP
RFQ
RFQ
3,959
In-stock
STMicroelectronics MOSFET N-CH 600V 0.6A TO-92 SuperMESH3™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 2.5W (Tc) N-Channel - 600V 600mA (Tc) 4.5 Ohm @ 1A, 10V 4.5V @ 50µA 12nC @ 10V 235pF @ 50V 10V ±30V
ZVP2120ASTZ
RFQ
RFQ
3,692
In-stock
Diodes Incorporated MOSFET P-CH 200V 0.12A TO92-3 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 700mW (Ta) P-Channel - 200V 120mA (Ta) 25 Ohm @ 150mA, 10V 3.5V @ 1mA - 100pF @ 25V 10V ±20V
STQ2LN60K3-AP
RFQ
RFQ
3,959
In-stock
STMicroelectronics MOSFET N-CH 600V 0.6A TO-92 SuperMESH3™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 2.5W (Tc) N-Channel - 600V 600mA (Tc) 4.5 Ohm @ 1A, 10V 4.5V @ 50µA 12nC @ 10V 235pF @ 50V 10V ±30V