Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPU60R1K5CEBKMA1
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1,611
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 28W (Tc) N-Channel - 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPU60R1K0CEBKMA1
RFQ
RFQ
1,776
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 37W (Tc) N-Channel - 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V
IPU60R1K5CEBKMA1
RFQ
RFQ
1,611
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 28W (Tc) N-Channel - 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPU60R1K0CEBKMA1
RFQ
RFQ
1,776
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 37W (Tc) N-Channel - 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V
IPU60R1K5CEBKMA1
RFQ
RFQ
1,611
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 28W (Tc) N-Channel - 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPU60R1K0CEBKMA1
RFQ
RFQ
1,776
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 37W (Tc) N-Channel - 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V