Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,619
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Renesas Electronics America MOSFET N-CH 60V 23A 8HSON - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-SMD, Flat Lead Exposed Pad 8-HSON 1W (Ta), 60W (Tc) N-Channel - 60V 23A (Tc) 27 mOhm @ 11.5A, 10V 2.5V @ 250µA 41nC @ 10V 1800pF @ 25V 5V, 10V ±20V
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RFQ
RFQ
3,619
In-stock
Renesas Electronics America MOSFET N-CH 60V 23A 8HSON - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-SMD, Flat Lead Exposed Pad 8-HSON 1W (Ta), 60W (Tc) N-Channel - 60V 23A (Tc) 27 mOhm @ 11.5A, 10V 2.5V @ 250µA 41nC @ 10V 1800pF @ 25V 5V, 10V ±20V
TPN1R603PL,L1Q
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
TPN1R603PL,L1Q
Per Unit
$1.56
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2,580
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
TPN1R603PL,L1Q
Per Unit
$0.57
RFQ
RFQ
2,427
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
Default Photo
RFQ
RFQ
3,619
In-stock
Renesas Electronics America MOSFET N-CH 60V 23A 8HSON - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-SMD, Flat Lead Exposed Pad 8-HSON 1W (Ta), 60W (Tc) N-Channel - 60V 23A (Tc) 27 mOhm @ 11.5A, 10V 2.5V @ 250µA 41nC @ 10V 1800pF @ 25V 5V, 10V ±20V
TPN1R603PL,L1Q
RFQ
RFQ
1,379
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
TPN1R603PL,L1Q
Per Unit
$1.56
RFQ
RFQ
2,580
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
TPN1R603PL,L1Q
Per Unit
$0.57
RFQ
RFQ
2,427
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V