- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
20 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
790
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 80A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | 3600pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,909
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 80A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 40V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | 3300pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,030
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 60A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.8W (Ta), 88W (Tc) | N-Channel | - | 40V | 60A (Tc) | 6.3 mOhm @ 30A, 10V | 4V @ 250µA | 60nC @ 10V | 3200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,626
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 48A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 85W (Tc) | N-Channel | - | 55V | 48A (Tc) | 17 mOhm @ 24A, 10V | 2.5V @ 250µA | 60nC @ 10V | 3000pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
790
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 80A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | 3600pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,909
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 80A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 40V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | 3300pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,030
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 60A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.8W (Ta), 88W (Tc) | N-Channel | - | 40V | 60A (Tc) | 6.3 mOhm @ 30A, 10V | 4V @ 250µA | 60nC @ 10V | 3200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,626
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 48A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 85W (Tc) | N-Channel | - | 55V | 48A (Tc) | 17 mOhm @ 24A, 10V | 2.5V @ 250µA | 60nC @ 10V | 3000pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
933
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 60V | 60A (Ta) | 8 mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | 2900pF @ 10V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,426
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,005
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,363
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
790
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 80A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | 3600pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,909
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 80A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 120W (Tc) | N-Channel | - | 40V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | 3300pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,030
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 60A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.8W (Ta), 88W (Tc) | N-Channel | - | 40V | 60A (Tc) | 6.3 mOhm @ 30A, 10V | 4V @ 250µA | 60nC @ 10V | 3200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,626
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 48A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 85W (Tc) | N-Channel | - | 55V | 48A (Tc) | 17 mOhm @ 24A, 10V | 2.5V @ 250µA | 60nC @ 10V | 3000pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
933
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 60V | 60A (Ta) | 8 mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | 2900pF @ 10V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,426
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,005
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,363
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
