- Series :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,966
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 80A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 40V | 80A (Ta) | 5.2 mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | 7770pF @ 10V | 6V, 10V | +10V, -20V | |||
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RFQ |
1,319
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 60V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | 4200pF @ 10V | 6V, 10V | ±20V | |||
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|
RFQ |
2,659
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 80A (Ta) | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | 4340pF @ 10V | 6V, 10V | ±20V | |||
|
|
RFQ |
1,966
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 80A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 40V | 80A (Ta) | 5.2 mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | 7770pF @ 10V | 6V, 10V | +10V, -20V | |||
|
|
RFQ |
1,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 60V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | 4200pF @ 10V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,659
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 80A (Ta) | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | 4340pF @ 10V | 6V, 10V | ±20V | |||
|
|
RFQ |
1,966
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 80A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 40V | 80A (Ta) | 5.2 mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | 7770pF @ 10V | 6V, 10V | +10V, -20V | |||
|
|
RFQ |
1,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 60V | 80A (Ta) | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | 4200pF @ 10V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,659
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 80A (Ta) | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | 4340pF @ 10V | 6V, 10V | ±20V | |||
