- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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32 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
1,521
In-stock
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Renesas Electronics America | MOSFET P-CH 40V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 40V | 100A (Tc) | 3.7 mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,322
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 100A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 60V | 100A (Tc) | 6 mOhm @ 50A, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,093
In-stock
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Renesas Electronics America | MOSFET P-CH 60V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 60V | 100A (Tc) | 6 mOhm @ 50A, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,314
In-stock
|
Renesas Electronics America | MOSFET P-CH 40V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 40V | 100A (Tc) | 3.5 mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,440
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | - | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
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RFQ |
3,464
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 1.8W (Ta), 176W (Tc) | N-Channel | 55V | 100A (Tc) | 3.25 mOhm @ 50A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V | |||
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RFQ |
3,576
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 100A TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263 | 1.8W (Ta), 176W (Tc) | N-Channel | 40V | 100A (Tc) | 2.3 mOhm @ 50A, 10V | - | 120nC @ 10V | 7050pF @ 25V | 10V | ±20V | |||
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|
RFQ |
1,521
In-stock
|
Renesas Electronics America | MOSFET P-CH 40V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 40V | 100A (Tc) | 3.7 mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,322
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 100A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 60V | 100A (Tc) | 6 mOhm @ 50A, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,093
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 60V | 100A (Tc) | 6 mOhm @ 50A, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,314
In-stock
|
Renesas Electronics America | MOSFET P-CH 40V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 40V | 100A (Tc) | 3.5 mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,440
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | - | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
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|
|
RFQ |
3,464
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 1.8W (Ta), 176W (Tc) | N-Channel | 55V | 100A (Tc) | 3.25 mOhm @ 50A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V | |||
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|
|
RFQ |
3,576
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 100A TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263 | 1.8W (Ta), 176W (Tc) | N-Channel | 40V | 100A (Tc) | 2.3 mOhm @ 50A, 10V | - | 120nC @ 10V | 7050pF @ 25V | 10V | ±20V | |||
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|
|
RFQ |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,426
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,005
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
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RFQ |
2,363
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
961
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.2KV 50A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 583W (Tc) | - | 1200V | 100A (Tc) | 25 mOhm @ 50A | - | - | 7209pF @ 800V | - | - | |||
|
|
RFQ |
1,521
In-stock
|
Renesas Electronics America | MOSFET P-CH 40V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 40V | 100A (Tc) | 3.7 mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,322
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 100A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 60V | 100A (Tc) | 6 mOhm @ 50A, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,093
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 60V | 100A (Tc) | 6 mOhm @ 50A, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,314
In-stock
|
Renesas Electronics America | MOSFET P-CH 40V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 200W (Tc) | P-Channel | 40V | 100A (Tc) | 3.5 mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,440
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | - | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
|
|
|
RFQ |
3,464
In-stock
|
Renesas Electronics America | MOSFET N-CH 55V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 1.8W (Ta), 176W (Tc) | N-Channel | 55V | 100A (Tc) | 3.25 mOhm @ 50A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V | |||
|
|
|
RFQ |
3,576
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 100A TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263 | 1.8W (Ta), 176W (Tc) | N-Channel | 40V | 100A (Tc) | 2.3 mOhm @ 50A, 10V | - | 120nC @ 10V | 7050pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,426
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,005
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
