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50 results
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
GA20JT12-247
RFQ
RFQ
2,973
In-stock
 GeneSiC Semiconductor TRANS SJT 1.2KV 20A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 20A (Tc) 70 mOhm @ 20A - - - - -
Default Photo
GA10JT12-247
RFQ
RFQ
2,727
In-stock
 GeneSiC Semiconductor TRANS SJT 1.2KV 10A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 170W (Tc) - 1200V 10A (Tc) 140 mOhm @ 10A - - - - -
Default Photo
GA05JT12-247
RFQ
RFQ
3,666
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 5A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 106W (Tc) - 1200V 5A (Tc) 280 mOhm @ 5A - - - - -
Default Photo
GA06JT12-247
RFQ
RFQ
1,525
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 6A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB - - 1200V 6A (Tc) (90°C) 220 mOhm @ 6A - - - - -
Default Photo
GA03JT12-247
RFQ
RFQ
1,365
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 3A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 15W (Tc) - 1200V 3A (Tc) (95°C) 460 mOhm @ 3A - - - - -
GA10SICP12-263
GA10SICP12-263
Per Unit
$28.89
 RFQ
RFQ
864
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 25A TO263-7 - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 170W (Tc) - 1200V 25A (Tc) 100 mOhm @ 10A - - 1403pF @ 800V - -
Default Photo
SCT3030KLGC11
Per Unit
$44.22
 RFQ
RFQ
1,152
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 72A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 339W (Tc) N-Channel 1200V 72A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 131nC @ 18V 2222pF @ 800V 18V +22V, -4V
Default Photo
SCT2080KEC
Per Unit
$26.89
 RFQ
RFQ
2,630
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 18V +22V, -6V
Default Photo
SCT3040KLGC11
Per Unit
$26.25
 RFQ
RFQ
2,729
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 55A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel 1200V 55A (Tc) 52 mOhm @ 20A, 18V 5.6V @ 10mA 107nC @ 18V 1337pF @ 800V 18V +22V, -4V
Default Photo
SCT2280KEC
Per Unit
$12.10
 RFQ
RFQ
2,045
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 14A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 108W (Tc) N-Channel 1200V 14A (Tc) 364 mOhm @ 4A, 18V 4V @ 1.4mA 36nC @ 18V 667pF @ 800V 18V +22V, -6V
Default Photo
SCT3080KLGC11
Per Unit
$10.90
 RFQ
RFQ
2,545
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 31A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 165W (Tc) N-Channel 1200V 31A (Tc) 104 mOhm @ 10A, 18V 5.6V @ 5mA 60nC @ 18V 785pF @ 800V 18V +22V, -4V
Default Photo
SCT3160KLGC11
Per Unit
$6.17
 RFQ
RFQ
1,359
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 17A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 103W (Tc) N-Channel 1200V 17A (Tc) 208 mOhm @ 5A, 18V 5.6V @ 2.5mA 42nC @ 18V 398pF @ 800V 18V +22V, -4V
Default Photo
GA20JT12-247
RFQ
RFQ
2,973
In-stock
 GeneSiC Semiconductor TRANS SJT 1.2KV 20A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 20A (Tc) 70 mOhm @ 20A - - - - -
Default Photo
GA10JT12-247
RFQ
RFQ
2,727
In-stock
 GeneSiC Semiconductor TRANS SJT 1.2KV 10A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 170W (Tc) - 1200V 10A (Tc) 140 mOhm @ 10A - - - - -
Default Photo
GA05JT12-247
RFQ
RFQ
3,666
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 5A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 106W (Tc) - 1200V 5A (Tc) 280 mOhm @ 5A - - - - -
Default Photo
GA06JT12-247
RFQ
RFQ
1,525
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 6A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB - - 1200V 6A (Tc) (90°C) 220 mOhm @ 6A - - - - -
Default Photo
GA03JT12-247
RFQ
RFQ
1,365
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 3A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 15W (Tc) - 1200V 3A (Tc) (95°C) 460 mOhm @ 3A - - - - -
GA10SICP12-263
GA10SICP12-263
Per Unit
$28.89
 RFQ
RFQ
864
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 25A TO263-7 - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 170W (Tc) - 1200V 25A (Tc) 100 mOhm @ 10A - - 1403pF @ 800V - -
Default Photo
SCT3030KLGC11
Per Unit
$44.22
 RFQ
RFQ
1,152
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 72A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 339W (Tc) N-Channel 1200V 72A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 131nC @ 18V 2222pF @ 800V 18V +22V, -4V
Default Photo
SCT2080KEC
Per Unit
$26.89
 RFQ
RFQ
2,630
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 18V +22V, -6V
Default Photo
SCT3040KLGC11
Per Unit
$26.25
 RFQ
RFQ
2,729
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 55A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel 1200V 55A (Tc) 52 mOhm @ 20A, 18V 5.6V @ 10mA 107nC @ 18V 1337pF @ 800V 18V +22V, -4V
Default Photo
SCT2280KEC
Per Unit
$12.10
 RFQ
RFQ
2,045
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 14A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 108W (Tc) N-Channel 1200V 14A (Tc) 364 mOhm @ 4A, 18V 4V @ 1.4mA 36nC @ 18V 667pF @ 800V 18V +22V, -6V
Default Photo
SCT3080KLGC11
Per Unit
$10.90
 RFQ
RFQ
2,545
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 31A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 165W (Tc) N-Channel 1200V 31A (Tc) 104 mOhm @ 10A, 18V 5.6V @ 5mA 60nC @ 18V 785pF @ 800V 18V +22V, -4V
Default Photo
SCT3160KLGC11
Per Unit
$6.17
 RFQ
RFQ
1,359
In-stock
 Rohm Semiconductor MOSFET NCH 1.2KV 17A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 103W (Tc) N-Channel 1200V 17A (Tc) 208 mOhm @ 5A, 18V 5.6V @ 2.5mA 42nC @ 18V 398pF @ 800V 18V +22V, -4V
Default Photo
SCH2080KEC
Per Unit
$43.36
 RFQ
RFQ
690
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 1850pF @ 800V 18V +22V, -6V
Default Photo
GA50JT12-247
Per Unit
$119.89
 RFQ
RFQ
961
In-stock
 GeneSiC Semiconductor TRANS SJT 1.2KV 50A - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 583W (Tc) - 1200V 100A (Tc) 25 mOhm @ 50A - - 7209pF @ 800V - -
Default Photo
SCT2160KEC
Per Unit
$16.75
 RFQ
RFQ
1,872
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 22A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 165W (Tc) N-Channel 1200V 22A (Tc) 208 mOhm @ 7A, 18V 4V @ 2.5mA 62nC @ 18V 1200pF @ 800V 18V +22V, -6V
Default Photo
SCT2450KEC
Per Unit
$9.57
 RFQ
RFQ
1,775
In-stock
 Rohm Semiconductor MOSFET N-CH 1200V 10A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 85W (Tc) N-Channel 1200V 10A (Tc) 585 mOhm @ 3A, 18V 4V @ 900µA 27nC @ 18V 463pF @ 800V 18V +22V, -6V
GA20JT12-263
GA20JT12-263
Per Unit
$42.13
 RFQ
RFQ
3,749
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 45A - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 282W (Tc) - 1200V 45A (Tc) 60 mOhm @ 20A - - 3091pF @ 800V - -
GA10JT12-263
GA10JT12-263
Per Unit
$23.17
 RFQ
RFQ
2,059
In-stock
 GeneSiC Semiconductor TRANS SJT 1200V 25A - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount - - 170W (Tc) - 1200V 25A (Tc) 120 mOhm @ 10A - - 1403pF @ 800V - -
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