- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
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RFQ |
2,358
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V | |||
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RFQ |
2,619
In-stock
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Infineon Technologies | MOSFET N-CH 150V 21A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,358
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,092
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 83A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 150V | 83A (Tc) | 11.1 mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,619
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 21A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,092
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 83A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 150V | 83A (Tc) | 11.1 mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
958
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,358
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,619
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 21A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 68W (Tc) | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
2,092
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 83A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 150V | 83A (Tc) | 11.1 mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
958
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 150V | 100A (Tc) | 7.5 mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | 8V, 10V | ±20V | |||
