Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI200N25N3GAKSA1
Per Unit
$4.75
RFQ
RFQ
1,303
In-stock
Infineon Technologies MOSFET N-CH 250V 64A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 250V 64A (Tc) 20 mOhm @ 64A, 10V 4V @ 270µA 86nC @ 10V 7100pF @ 100V 10V ±20V
IPI110N20N3GAKSA1
Per Unit
$4.52
RFQ
RFQ
1,877
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 200V 88A (Tc) 11 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPI200N25N3GAKSA1
Per Unit
$4.75
RFQ
RFQ
1,303
In-stock
Infineon Technologies MOSFET N-CH 250V 64A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 250V 64A (Tc) 20 mOhm @ 64A, 10V 4V @ 270µA 86nC @ 10V 7100pF @ 100V 10V ±20V
IPI110N20N3GAKSA1
Per Unit
$4.52
RFQ
RFQ
1,877
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 200V 88A (Tc) 11 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPI200N25N3GAKSA1
Per Unit
$4.75
RFQ
RFQ
1,303
In-stock
Infineon Technologies MOSFET N-CH 250V 64A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 250V 64A (Tc) 20 mOhm @ 64A, 10V 4V @ 270µA 86nC @ 10V 7100pF @ 100V 10V ±20V
IPI110N20N3GAKSA1
Per Unit
$4.52
RFQ
RFQ
1,877
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 200V 88A (Tc) 11 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V