- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
|
RFQ |
2,888
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3-1 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 71W (Tc) | N-Channel | 40V | 80A (Tc) | 4.3 mOhm @ 80A, 10V | 2.2V @ 35µA | 60nC @ 10V | 4690pF @ 25V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
2,990
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 115W (Tc) | N-Channel | 40V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 4V @ 65µA | 60nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,069
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 8A TO262-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
2,888
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3-1 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 71W (Tc) | N-Channel | 40V | 80A (Tc) | 4.3 mOhm @ 80A, 10V | 2.2V @ 35µA | 60nC @ 10V | 4690pF @ 25V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
2,990
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 115W (Tc) | N-Channel | 40V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 4V @ 65µA | 60nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
|
|
|
RFQ |
1,069
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 8A TO262-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
2,888
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3-1 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 71W (Tc) | N-Channel | 40V | 80A (Tc) | 4.3 mOhm @ 80A, 10V | 2.2V @ 35µA | 60nC @ 10V | 4690pF @ 25V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
2,990
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 115W (Tc) | N-Channel | 40V | 80A (Tc) | 4.8 mOhm @ 80A, 10V | 4V @ 65µA | 60nC @ 10V | 3900pF @ 25V | 10V | ±20V | |||
|
|
|
RFQ |
1,069
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 8A TO262-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
