- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
21 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
735
In-stock
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Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 40V | 80A (Tc) | 4.1 mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
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|
RFQ |
1,742
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | 10V | ±20V | |||
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RFQ |
3,260
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | 10400pF @ 25V | 10V | ±20V | |||
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|
RFQ |
2,427
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,345
In-stock
|
Infineon Technologies | MOSFET N-CH 250V 25A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 250V | 25A (Tc) | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
735
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 40V | 80A (Tc) | 4.1 mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
1,742
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | 10V | ±20V | |||
|
|
RFQ |
883
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | 10V | ±20V | |||
|
|
RFQ |
3,260
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | 10400pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,427
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,345
In-stock
|
Infineon Technologies | MOSFET N-CH 250V 25A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 250V | 25A (Tc) | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
883
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | 10V | ±20V | |||
|
|
RFQ |
735
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 40V | 80A (Tc) | 4.1 mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
1,742
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | 10V | ±20V | |||
|
|
RFQ |
3,260
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | 10400pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,427
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,345
In-stock
|
Infineon Technologies | MOSFET N-CH 250V 25A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 250V | 25A (Tc) | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
883
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 90A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 90A (Tc) | 4 mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | 10V | ±20V | |||
