- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,885
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 40V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | 3250pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
653
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
1,065
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,885
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 40V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | 3250pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
653
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
1,065
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,885
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 40V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | 3250pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
653
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
1,065
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
