Transistors - FETs, MOSFETs - Single Products For Sale - PDF - Discrete Semiconductor Products

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Picture	Mfr Part #	Unit Price	QUANTITY		Inventory	MANUFACTURE	Description	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IPI020N06NAKSA1	Per Unit $2.75	RFQ	PDF RFQ	1,335 In-stock	Infineon Technologies	MOSFET N-CH 60V 29A TO262-3	OptiMOS™	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	PG-TO262-3	3W (Ta), 214W (Tc)	N-Channel	-	60V	29A (Ta), 120A (Tc)	2 mOhm @ 100A, 10V	2.8V @ 143µA	106nC @ 10V	7800pF @ 30V	6V, 10V	±20V
	IPI020N06NAKSA1	Per Unit $2.75	RFQ	PDF RFQ	1,335 In-stock	Infineon Technologies	MOSFET N-CH 60V 29A TO262-3	OptiMOS™	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	PG-TO262-3	3W (Ta), 214W (Tc)	N-Channel	-	60V	29A (Ta), 120A (Tc)	2 mOhm @ 100A, 10V	2.8V @ 143µA	106nC @ 10V	7800pF @ 30V	6V, 10V	±20V
	IPI020N06NAKSA1	Per Unit $2.75	RFQ	PDF RFQ	1,335 In-stock	Infineon Technologies	MOSFET N-CH 60V 29A TO262-3	OptiMOS™	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	PG-TO262-3	3W (Ta), 214W (Tc)	N-Channel	-	60V	29A (Ta), 120A (Tc)	2 mOhm @ 100A, 10V	2.8V @ 143µA	106nC @ 10V	7800pF @ 30V	6V, 10V	±20V

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