- Part Status :
- Mounting Type :
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- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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24 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,873
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
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RFQ |
1,751
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
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RFQ |
3,264
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | - | - | |||
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RFQ |
1,276
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | |||
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RFQ |
951
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.9 mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | 10V | ±20V | |||
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RFQ |
1,873
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
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RFQ |
1,751
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
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RFQ |
3,264
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | - | - | |||
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RFQ |
1,304
In-stock
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Infineon Technologies | MOSFET N-CH 120V 120A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 4.1 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
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RFQ |
1,276
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | |||
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RFQ |
951
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.9 mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | 10V | ±20V | |||
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RFQ |
1,304
In-stock
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Infineon Technologies | MOSFET N-CH 120V 120A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 4.1 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
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RFQ |
1,226
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
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RFQ |
3,441
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
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RFQ |
2,611
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
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RFQ |
1,873
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V | |||
|
|
RFQ |
1,751
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
|
|
RFQ |
3,264
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | - | - | |||
|
|
RFQ |
1,276
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 120A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
951
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.9 mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,304
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 120A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 4.1 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
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|
RFQ |
1,226
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
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|
RFQ |
3,441
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | 10V | ±20V | |||
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|
RFQ |
2,611
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 10V | ±20V |