- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
12 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
3,393
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 63W (Tc) | N-Channel | - | 25V | 50A (Tc) | 9.2 mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | 1642pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 25V | 50A (Tc) | 6.2 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,127
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 50A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 50A (Tc) | 15.7 mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | 4180pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
3,393
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 63W (Tc) | N-Channel | - | 25V | 50A (Tc) | 9.2 mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | 1642pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 25V | 50A (Tc) | 6.2 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,127
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 50A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 50A (Tc) | 15.7 mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | 4180pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,491
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 50A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 150V | 50A (Tc) | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
3,393
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 63W (Tc) | N-Channel | - | 25V | 50A (Tc) | 9.2 mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | 1642pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 25V | 50A (Tc) | 6.2 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,127
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 50A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 50A (Tc) | 15.7 mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | 4180pF @ 25V | 4.5V, 10V | ±20V | |||
