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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
2,427
In-stock
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Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
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RFQ |
2,427
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
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|
RFQ |
2,427
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 34A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
