- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
15 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,548
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 75V | 80A (Tc) | 5.2 mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | 4750pF @ 37.5V | 10V | ±20V | |||
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RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
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RFQ |
3,264
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | - | - | |||
|
|
RFQ |
2,866
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 100A (Tc) | 7.1 mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | 4700pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,396
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | 4700pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,548
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 75V | 80A (Tc) | 5.2 mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | 4750pF @ 37.5V | 10V | ±20V | |||
|
|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
|
|
RFQ |
3,264
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | - | - | |||
|
|
RFQ |
2,866
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 100A (Tc) | 7.1 mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | 4700pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,396
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | 4700pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,548
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 75V | 80A (Tc) | 5.2 mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | 4750pF @ 37.5V | 10V | ±20V | |||
|
|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
|
|
RFQ |
3,264
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | - | - | |||
|
|
RFQ |
2,866
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 100A (Tc) | 7.1 mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | 4700pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,396
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 75V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | 4700pF @ 25V | 10V | ±20V | |||
