- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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9 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,191
In-stock
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Infineon Technologies | MOSFET N-CH 100V 27A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | N-Channel | - | 100V | 27A (Tc) | 35 mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | 10V | ±20V | |||
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RFQ |
3,279
In-stock
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Infineon Technologies | MOSFET P-CH 30V 45A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | P-Channel | - | 30V | 45A (Tc) | 11.1 mOhm @ 45A, 10V | 2V @ 85µA | 55nC @ 10V | 3770pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 27A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | N-Channel | - | 100V | 27A (Tc) | 35 mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | 10V | ±20V | |||
|
|
RFQ |
3,279
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 45A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | P-Channel | - | 30V | 45A (Tc) | 11.1 mOhm @ 45A, 10V | 2V @ 85µA | 55nC @ 10V | 3770pF @ 25V | 4.5V, 10V | +5V, -16V | |||
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RFQ |
3,956
In-stock
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Infineon Technologies | MOSFET N-CH 40V 70A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | N-Channel | - | 40V | 70A (Tc) | 6.5 mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | 2550pF @ 25V | 10V | ±20V | |||
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RFQ |
3,956
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 70A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | N-Channel | - | 40V | 70A (Tc) | 6.5 mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | 2550pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 27A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | N-Channel | - | 100V | 27A (Tc) | 35 mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | 10V | ±20V | |||
|
|
RFQ |
3,279
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 45A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | P-Channel | - | 30V | 45A (Tc) | 11.1 mOhm @ 45A, 10V | 2V @ 85µA | 55nC @ 10V | 3770pF @ 25V | 4.5V, 10V | +5V, -16V | |||
|
|
RFQ |
3,956
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 70A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 58W (Tc) | N-Channel | - | 40V | 70A (Tc) | 6.5 mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | 2550pF @ 25V | 10V | ±20V |