- Series :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
30 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
1,062
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,361
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 6.5 mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | 10V | ±20V | |||
|
|
RFQ |
1,725
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.75 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
|
|
RFQ |
3,552
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.4 mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | 14230pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,256
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 100A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.75 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
840
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 137A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
|
|
RFQ |
1,062
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,361
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 6.5 mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | 10V | ±20V | |||
|
|
RFQ |
1,725
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.75 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
|
|
RFQ |
2,625
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
|
|
RFQ |
3,552
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.4 mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | 14230pF @ 25V | 10V | ±20V | |||
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|
RFQ |
826
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.8 mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | 5V, 10V | ±16V | |||
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|
RFQ |
2,092
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 83A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 150V | 83A (Tc) | 11.1 mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | 8V, 10V | ±20V | |||
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|
RFQ |
2,256
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 100A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.75 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 6V, 10V | ±20V | |||
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|
|
RFQ |
840
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 137A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,625
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
|
|
RFQ |
826
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.8 mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | 5V, 10V | ±16V | |||
|
|
RFQ |
2,092
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 83A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 150V | 83A (Tc) | 11.1 mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | 8V, 10V | ±20V | |||
|
|
RFQ |
1,062
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
1,361
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 6.5 mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | 10V | ±20V | |||
|
|
RFQ |
1,725
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.75 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,228
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 75V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | 8130pF @ 37.5V | - | - | |||
|
|
RFQ |
3,552
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.4 mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | 14230pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
2,256
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 100A | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.75 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | 6V, 10V | ±20V | |||
|
|
|
RFQ |
840
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 137A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
|
|
RFQ |
2,625
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
|
|
RFQ |
826
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.8 mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | 5V, 10V | ±16V | |||
|
|
RFQ |
2,092
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 83A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 150V | 83A (Tc) | 11.1 mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | 8V, 10V | ±20V | |||
