- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
15 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,780
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.1 mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
1,065
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
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RFQ |
3,144
In-stock
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Infineon Technologies | MOSFET N-CH 55V 77A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 55V | 77A (Tc) | 9.1 mOhm @ 39A, 10V | 4V @ 55µA | 103nC @ 10V | 5335pF @ 25V | 10V | ±20V | |||
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RFQ |
3,533
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 25V | 80A (Tc) | 4.2 mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | 3877pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
678
In-stock
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Infineon Technologies | MOSFET N-CH 120V 56A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
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|
RFQ |
3,780
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.1 mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,065
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,144
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 77A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 55V | 77A (Tc) | 9.1 mOhm @ 39A, 10V | 4V @ 55µA | 103nC @ 10V | 5335pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,533
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 25V | 80A (Tc) | 4.2 mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | 3877pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
678
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 56A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | |||
|
|
RFQ |
3,780
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.1 mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,065
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,144
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 77A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 55V | 77A (Tc) | 9.1 mOhm @ 39A, 10V | 4V @ 55µA | 103nC @ 10V | 5335pF @ 25V | 10V | ±20V | |||
|
|
RFQ |
3,533
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 25V | 80A (Tc) | 4.2 mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | 3877pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
678
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 56A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V |