- Series :
- Part Status :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
20 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 25V | 50A (Tc) | 6.2 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,660
In-stock
|
Infineon Technologies | MOSFET N-CH 900V 5.1A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,613
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
2,338
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 600V | 10.6A (Tc) | 380 mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | 700pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,377
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,295
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 25V | 50A (Tc) | 6.2 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,660
In-stock
|
Infineon Technologies | MOSFET N-CH 900V 5.1A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,613
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
2,338
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 600V | 10.6A (Tc) | 380 mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | 700pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,377
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,295
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
849
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 9A I2PAK | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,191
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 50A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 25V | 50A (Tc) | 6.2 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,660
In-stock
|
Infineon Technologies | MOSFET N-CH 900V 5.1A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,613
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
2,338
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 600V | 10.6A (Tc) | 380 mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | 700pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
3,377
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
1,295
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
|
|
RFQ |
849
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 9A I2PAK | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V |