Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQB4P25TM
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SPB08P06PGATMA1
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Infineon Technologies MOSFET P-CH 60V 8.8A TO-263 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 42W (Tc) P-Channel - 60V 8.8A (Ta) 300 mOhm @ 6.2A, 10V 4V @ 250µA 13nC @ 10V 420pF @ 25V 10V ±20V
FQB4P25TM
RFQ
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3,397
In-stock
ON Semiconductor MOSFET P-CH 250V 4A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 75W (Tc) P-Channel - 250V 4A (Tc) 2.1 Ohm @ 2A, 10V 5V @ 250µA 14nC @ 10V 420pF @ 25V 10V ±30V
SPB08P06PGATMA1
Per Unit
$0.47
RFQ
RFQ
3,382
In-stock
Infineon Technologies MOSFET P-CH 60V 8.8A TO-263 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 42W (Tc) P-Channel - 60V 8.8A (Ta) 300 mOhm @ 6.2A, 10V 4V @ 250µA 13nC @ 10V 420pF @ 25V 10V ±20V