Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
RFQ
680
In-stock
Infineon Technologies MOSFET N-CH 80V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 150W (Tc) N-Channel - 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
Default Photo
RFQ
RFQ
680
In-stock
Infineon Technologies MOSFET N-CH 80V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 150W (Tc) N-Channel - 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
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Per Unit
$2.23
RFQ
RFQ
703
In-stock
Infineon Technologies MOSFET N-CH 80V 80A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 150W (Tc) N-Channel - 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
IPP057N08N3GHKSA1
RFQ
RFQ
680
In-stock
Infineon Technologies MOSFET N-CH 80V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 150W (Tc) N-Channel - 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
IPP057N08N3GXKSA1
Per Unit
$2.23
RFQ
RFQ
703
In-stock
Infineon Technologies MOSFET N-CH 80V 80A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 150W (Tc) N-Channel - 80V 80A (Tc) 5.7 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V