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8 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
2,434
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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RFQ |
3,002
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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RFQ |
2,434
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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|
RFQ |
3,002
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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RFQ |
1,670
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
|
RFQ |
2,434
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
|
RFQ |
3,002
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
|
|
RFQ |
1,670
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
