Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPW65R070C6FKSA1
Per Unit
$10.57
RFQ
RFQ
1,065
In-stock
Infineon Technologies MOSFET N-CH 650V 53.5A TO247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 391W (Tc) N-Channel - 650V 53.5A (Tc) 70 mOhm @ 17.6A, 10V 3.5V @ 1.76mA 170nC @ 10V 3900pF @ 100V 10V ±20V
IPW65R070C6FKSA1
Per Unit
$10.57
RFQ
RFQ
1,065
In-stock
Infineon Technologies MOSFET N-CH 650V 53.5A TO247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 391W (Tc) N-Channel - 650V 53.5A (Tc) 70 mOhm @ 17.6A, 10V 3.5V @ 1.76mA 170nC @ 10V 3900pF @ 100V 10V ±20V